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Crystal structure,Group of symmetry,Number of atoms in 1 cm3,Auger recombination coefficient Cn, Auger recombination coefficient Cp, Debye temperature, Density, Dielectric constant, Effective electron mass,Effective electron mass,Effective hole mass,Effective hole mass,Electron affinity, Lattice constant, Optical phonon energy, Energy gap, Energy separation, Energy spin-orbital splitting, Intrinsic carrier concentration, Intrinsic resistivity, Effective conduction band density states,Effective valence band density of states, Band structure of Si at 300 K,Temperature dependence of the energy gap,Temperature dependence of the energy gap,Temperature dependence of the direct band gap, Intrinsic carrier concentration,Effective density of states in the conduction band,Effective density of states in the valence band,The temperature dependence of the intrinsic carrier concentration.(Shur [1990]),Fermi level versus temperature for different concentrations of shallow donors and acceptors,(Grove [1967]),Dependence of the Energy Gap on Hydrostatic Pressure,Electrical and optical energy gap narrowing versus donor doping density. (Van Overstaeten and Mertens [1987]),For 1 E17 ≤ N ≤ 3 E17 cm-3,ΔEgel ~ 3.5E-8·Nd1/3 (eV); (Nd in cm-3),Effective Masses of Electrons, Effective Masses of Holes, Ionization energies of shallow DONORS (eV),Ionization energies of shallow ACCEPTORS (eV),Deep Levels Impurities,*Position in the Forbidden group,a - acceptor, d - donor
SiO2 color chart for thermally grown silicon dioxide, HTE Labs provides process specialties wafer foundry, thin film vacuum deposition
services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry,
R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers
from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process,45V
bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes.
R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial
process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb),
MEMS technology, smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies
and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including
SAW, Ti diffusion, light wave guides and Mach-Zender light modulators. Specialty wafer Fab processing: epi deposition, epitaxy,
SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4, SiO2, platinum silicidation, photo-lithography,
plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition,
gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2,
silicon wafers back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions
and alloy : gold electroplating and gold bump, wafer probing, dicing services, wafer saw, package development, solid via packages,
packaging and test services, failure analysis services, SEM, scanning electron microscopy, ellipsometer measurements, four
point probe measurements.
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