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45V 200MHz  Analog Bipolar PROCESS

STANDARD PROCESS OVERVIEW The standard 45V 200MHz analog bipolar process employs  N type silicon epitaxial layer on  P type silicon substrate. In the standard process up to 8 masks are used: - buried layer (sub collector), isolation, base, emitter, contact mask, thin film resistor mask, metal mask, pad mask. The devices available are vertical NPN transistors, vertical substrate PNP transistors, lateral PNP transistors, TaN2 - tantalum nitride  thin film resistors and MNOS MOS ( metal oxide semiconductor) capacitors.

PROCESS OPTIONSProcess enhancements are added to increase the integrated circuit designer's flexibility in designing with  HTE Labs analog bipolar process. Optional devices available are as follows: P JFET (p channel junction field effect transistor ), EPI N JFET (n channel silicon epitaxial junction field effect transistor ) , Schottky diodes,Varactor diodes, PIN diodes,Zenner diodes, laser trim able NiCr (nickel chrome resistors) , TaN2 ( tantalum nitride resistors ) or SiCr ( silicon chrome resistors ) sputtered  thin film resistors. Sheet resistance for  the integrated thin film resistors is offered in the widest range from 1ohm / square to 100k ohms / square while the temperature coefficient of resistance is between ± 25 ppm/°C to ± 500ppm/°C.

For metal interconnections HTE Labs process employs up to two layers of metallization, TiW/Au (standard metallization). The interlayer dielectric is 1m m SiO2 while the passivation is Si3N4 or SiO2. Minimum contact size is 3m m x 3m m while the metal pitch is 10m m. For flip chip, chip on board and chip scale packaging applications, Gold bumps or solder bumps are available process options. The 45V 200MHz custom analog bipolar  process employs up to 12 masking layers for all features to be included. What sets HTE Labs apart are couple main process options and capabilities that are not typically acceptable or handled by large wafer foundries:

0)- Custom developed processesHTE Labs has the engineering resources and processing capabilities to develop custom processes to fit customer's specific applications. This capability is offered to customers on a contract base only.
1)- High stability thin film resistors with sheet resistance as high as 100K ohms / square. The matching of the as deposited thin film resistors is excellent with ought expensive laser trim. The absolute values of resistors are  within ± 5% across the wafer and from wafer to wafer. For high speed RF IC process applications, thin film resistors are best suited due to their very low capacitance and low noise.
2)- High reliability gold metal interconnections  is a standard process feature specifically designed for hybrid circuits applications, chip on board applications and sensors that need to withstand corrosive environment where aluminum or copper metallization are not a suitable choices.
3)- MEMS smart sensor integration  KOH anisotropic etch, deep RIE etch, LPCVD polysilicon and front to back mask alignment are few process enhancements that are needed in developing and manufacturing of integrated smart pressure sensors, accelerometers and other as such.
4)- Optoelectronic integrated circuits Photo transistors, photodiodes and low capacitance high speed PIN diodes, when integrated with the bipolar process, allow increased flexibility to design and manufacturing of fiber optic amplifiers, optocouplers or optical switches.

Analog Bipolar process - 4" wafer foundry services
At this time HTE Labs offers only 4" wafer fabrication for the analog bipolar wafer foundry services. HTE Labs wafer fab specializes in prototypes and  small runs of standard and custom developed analog bipolar processes. Customer's own tooling can be used in most of the cases provided that design rules are compatible with current processes. For more information or a request for quote, please contact HTE Labs now, preferably in writing by fax or by e-mail: HERE

DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS
NPN transistor hFE
BVCEO
BVCBO
BVEBO
Ic = 100mA, Vce = 2.5V
Ice = 1mA
Icb = 1mA
Ieb = 1mA
150
45
60
0.2
250


6.8
500


8

V
V
V
PNP - L lateral transistor hFE
BVCEO
BVCBO
BVEBO
Ic = 100mA, Vce = 2.5V
Ice = 1mA
Icb = 1mA
Ieb = 1mA
30
30
50
30
40 50
V
V
V
PNP - V vertical substrate
pnp
hFE
BVCEO
BVCBO
BVEBO
Ic = 100mA, Vce = 2.5V
Ice = 1mA
Icb = 1mA
Ieb = 1mA
50
50
50
50
100 200
V
V
V
I2R Ion implanted resistors Rsq     150   W
MNOS C MOS capacitors C     0.3   pF/mil2

45V 500MHz Bipolar PROCESS OPTIONS
DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS
PJFET Vp
BVgd0
Vds = -3.0V
Igd = 10mA

25
2.0   V
V
TFR Rsq low
Rsq high
TCR low
    5
100k
<±25
±500
  W
W
ppm/C
ppm/C

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