LOW PRESSURE CHEMICAL VAPOR DEPOSITION, LPCVD SILICON NITRIDE DEPOSITION, LOW STRESS SILICON NITRIDE DEPOSITION, STOICHIOMETRIC SILICON NITRIDE DEPOSITION - Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers. Stoichiometric, low stress, silicon rich, LPCVD Silicon Nitride standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. For wafers supplied by HTE Labs, a standard chemical cleaning process may include RCA Clean as well as HF Dip. LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 100nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 100nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 200nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 200nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 300nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 300nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 400nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 400nm LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 500nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 500nm HTE Labs provides process specialties wafer foundry, thin film vacuum deposition services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry, R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process,45V bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes. R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), MEMS technology, smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including SAW, Ti diffusion, light wave guides and Mach-Zender light modulators. Specialty wafer Fab processing: epi deposition, epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition, gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump, wafer probing, dicing services, wafer saw, package development, solid via packages, packaging and test services, failure analysis services, SEM, scanning electron microscopy, ellipsometer measurements, four point probe measurements.
 

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LOW PRESSURE CHEMICAL VAPOR DEPOSITION
LPCVD SILICON NITRIDE DEPOSITION
LOW STRESS SILICON NITRIDE DEPOSITION
STOICHIOMETRIC SILICON NITRIDE DEPOSITION
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LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 100nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 100nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 200nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 200nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 300nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 300nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 400nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 400nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 500nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 500nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION - CUSTOM PROCESS STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION - CUSTOM PROCESS

Stoichiometric, low stress, silicon rich, LPCVD Silicon Nitride standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. For wafers supplied by HTE Labs, a standard chemical cleaning process may include RCA Clean as well as HF Dip.


Home>LPCVD SILICON NITRIDE LOW STRESS CVD SILICON RICH> Last updated: August 17, 2009

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