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LOW PRESSURE CHEMICAL VAPOR DEPOSITION
LPCVD SILICON NITRIDE DEPOSITION
LOW STRESS SILICON NITRIDE DEPOSITION
STOICHIOMETRIC SILICON NITRIDE DEPOSITION
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LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 100nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 100nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 200nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 200nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 300nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 300nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 400nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 400nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION = 500nm STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION = 500nm
LOW STRESS LPCVD SILICON NITRIDE DEPOSITION - CUSTOM PROCESS STOICHIOMETRIC LPCVD SILICON NITRIDE DEPOSITION - CUSTOM PROCESS

Stoichiometric, low stress, silicon rich, LPCVD Silicon Nitride standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Low pressure chemical vapor deposition of Silicon Nitride processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. This is a high temperature process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process. For wafers supplied by HTE Labs, a standard chemical cleaning process may include RCA Clean as well as HF Dip.


Home>LPCVD SILICON NITRIDE LOW STRESS CVD SILICON RICH> Last updated: July 24, 2019

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