PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Carbonitride SiCN deposition Plasma Enhanced CVD - PECVD Silicon Carbonitride SiCN 5000nm - SiCN 5000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Plasma Enhanced CVD - PECVD Silicon Carbonitride SiCN 5000nm - SiCN 5000nm - wafer PECVD process by HTE Labs
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Carbonitride SiCN deposition Plasma Enhanced CVD - PECVD Silicon Carbonitride SiCN 5000nm - SiCN 5000nm
Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide,
silicon nitride, silicon oxynitride un-doped silica glass (USG) , amorphous silicon a:Si, silicon carbide SIC and silicon carbonitride SICN or silicon
nitrocarbide SICN thin films. PECVD thin films are especially used to form antireflection coatings in optoelectronic devices, hard masks for chemical
etching or plasma etching of silicon, inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers
interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes.
Plasma Enhanced Chemical Vapor Deposition, PECVD Oxide, PECVD Nitride, PECVD Amorphous silicon, PECVD silicon Carbide and PECVD silicon Carbonitride or
Nitrocarbide standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm,
200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of silicon dioxide, silicon nitride, amorphous silicon,
silicon carbide and silicon nitrocarbide processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI
wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of silicon
dioxide, silicon nitride and amorphous silicon processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu],
tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a 280° C process and wafers should be free of any photoresist or organic contamination.
HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process
step or last cleaning process.
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Carbonitride SiCN deposition Plasma Enhanced CVD -
PECVD Silicon Carbonitride SiCN 5000nm - SiCN 5000nm - wafer PECVD process by HTE Labs PLASMA ENHANCED CHEMICAL VAPOR
DEPOSITION Plasma Enhanced CVD - PECVD Silicon Carbonitride SiCN 5000nm - SiCN 5000nm - wafer PECVD process by HTE Labs
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon Carbonitride SiCN deposition Plasma Enhanced CVD - PECVD
Silicon Carbonitride SiCN 5000nm - SiCN 5000nm HTE Labs logo PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION pecvd Silicon
Carbonitride SiCN deposition Plasma Enhanced CVD - PECVD Silicon Carbonitride SiCN 5000nm HTE Labs PROPERTIES /
FEATURES APPLICATIONS Chemical Composition: SiCN Refractive Index=2.2±0.1 Dielectric Constant=- Uniformity=0.1
Passivation of Integrated Circuits, protection of wafer surface. Dielectric for MNOS and MIM Capacitors. Dual
Damascene, STI shallow trench isolation, ILD. Wear Coating, Barrier Layer, masking layer, adhesion layer. Insulation
between conductors, Inter-layer Dielectric ILD. Thick dielectrics, etch stop, sacrificial layer, MEMS, etc. SHORT
PROCESS DESCRIPTION Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide,
silicon nitride, silicon oxynitride un-doped silica glass (USG) , amorphous silicon a:Si, silicon carbide SIC and silicon carbonitride SICN or silicon
nitrocarbide SICN thin films. PECVD thin films are especially used to form antireflection coatings in optoelectronic devices, hard masks for chemical
etching or plasma etching of silicon, inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers
interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes.
Plasma Enhanced Chemical Vapor Deposition, PECVD Oxide, PECVD Nitride, PECVD Amorphous silicon, PECVD silicon Carbide and PECVD silicon Carbonitride or
Nitrocarbide standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm,
200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of silicon dioxide, silicon nitride, amorphous silicon,
silicon carbide and silicon nitrocarbide processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI
wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of silicon
dioxide, silicon nitride and amorphous silicon processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu],
tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a 280° C process and wafers should be free of any photoresist or organic contamination.
HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process
step or last cleaning process.
WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT HTE LABS
is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for
existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or
thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and
discuss an application in the strictest confidentiality, navigate to CONTACT PAGE. PROCESS ORDERING INFORMATION WAFER
TYPE WAFER SIZE [mm] BATCH SIZE [wafers] TEMPERATURE [°C] THICKNESS [nm] GENERATE PROCESS NAME/TIME DEPOSITION TIME
[hours] Process parametter TIME is calculated using a deposition rate of 50nm/min as the worst case scenario. Actual
deposition rate may vary. HTE Labs whenever feasible is tailoring each process to customer specification such that the
end refractive index, thickness and film uniformity are within specified tolerance. STANDARD PROCESS PRICE LIST PROCESS
CODE WAFER TYPE WAFER SIZE [mm] BATCH SIZE [wafers] TEMPERATURE [°C] THICKNESS [nm] TIME [h] MINIM ORDER UNIT PRICE [$]
[SI][W100][PECVD][SiCN][5000NM] SI 100 8 280 5000 1.667 8 63.547 [SIC][W100][PECVD][SiCN][5000NM] SIC 100 8 280 5000
1.667 8 63.547 [SOI][W100][PECVD][SiCN][5000NM] SOI 100 8 280 5000 1.667 8 63.547 [SIGE][W100][PECVD][SiCN][5000NM]
SIGE 100 8 280 5000 1.667 8 63.547 [QZ][W100][PECVD][SiCN][5000NM] QZ 100 8 280 5000 1.667 8 63.547
[SAP][W100][PECVD][SiCN][5000NM] SAP 100 8 280 5000 1.667 8 63.547 [XYZ][W100][PECVD][SiCN][5000NM] XYZ 100 8 280 5000
1.667 8 63.547 Minimum batch for PECVD is 8 wafers for 100mm diameter. Unit price does not include SET-UP Charges, RUSH
charges or cost of wafers. INSTANT QUOTE PROCESS CODE QTY EMAIL ORDERING: Registered customers can order online from
within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued instantly for
all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS sales department
in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for Standard processes is 2-4
working days ARO. For Custom processes lead time may vary. HTE Labs may supply on request substrate materials from its
own inventory or from third party supplier. SHIPPING & PACKING: For certain processes, customer should ship only prime
wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by
customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air
bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam
packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic charge generated during
shipping. SAMPLES: Due to the nature of this product line, free samples are not available, unless they are against an
existing firm order, pending qualification of a process. HTE LABS guarantees continuous supply and availability of any
of it's standard or custom developed processes and technologies provided minimum order quantities are met. HTE LABS has
made every effort to have this information as accurate as possible. However, no responsibility is assumed by HTE LABS
for its use, nor for any infringements of rights of third parties, which may result from its use. HTE LABS reserves the
right to revise the content or modify its product line without prior notice. HTE LABS processes and technologies are
not authorized for and should not be used within support systems which are intended for surgical implants into the
body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without HTE
LABS specific written consent. Home> PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PECVD SiO2 SiON SiN a:Si SiC SiCN> Last
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