Silicon thermal oxidation standard processes available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers Silicon thermal oxidation processes are available only for prime wafers, delivered in sealed containers - HTE Labs, sputter deposition services, thin film vacuum deposition,wafer foundry, bipolar process development, contract R&D, bipolar wafer foundry services, thin film vacuum deposition services Research and Development Laboratories for semiconductor optoelectonics sensors microwave thin film active and passive components Research,Development,semiconductor,microelectronics,industry,wafer foundry,bipolar,High Voltage,Dielectic,Isolated,Thin film,active,passive,components,Flip Chip,Sensor Technologies,inertial,pressure,temperature,gas,smoke,detectors,Optoelectronic,Discrete,integrated circuits,diffused Light wave guides,Mach Zender light modulators,Epitaxy,Diffusion,Oxidation,Ion Implant,LPCVD,PECVD,Platinum silicidation,Photolithography,Plasma etching,Silicon Micromachining,KOH anisotropic etch,Sputter deposition,resistor,Lift Off Process,Back grind,Polish,Trimetal Backside deposition,Gold backside deposition,Gold Electro-plating,Gold Bump SILICON THERMAL OXIDATION - DRY OXIDATION =100nm SILICON THERMAL OXIDATION - WET OXIDATION =1000nm SILICON THERMAL OXIDATION - DRY OXIDATION =200nm SILICON THERMAL OXIDATION - WET OXIDATION =2000nm SILICON THERMAL OXIDATION - DRY OXIDATION =300nm SILICON THERMAL OXIDATION - WET OXIDATION =3000nm SILICON THERMAL OXIDATION - DRY OXIDATION =400nm SILICON THERMAL OXIDATION - WET OXIDATION =4000nm SILICON THERMAL OXIDATION - DRY OXIDATION - CUSTOM PROCESS SILICON THERMAL OXIDATION - WET OXIDATION - CUSTOM PROCESS Silicon thermal oxidation standard processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Silicon thermal oxidation processes are available only for prime wafers, delivered in sealed containers [original manufacturer seal must be present] or wafers supplied by HTE Labs. Standard process includes RCA Clean as well as HF Dip. HTE Labs provides process specialties wafer foundry, thin film vacuum deposition services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry, R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process,45V bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes. R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), MEMS technology, smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including SAW, Ti diffusion, light wave guides and Mach-Zender light modulators. Specialty wafer Fab processing: epi deposition, epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition, gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump, wafer probing, dicing services, wafer saw, package development, solid via packages, packaging and test services, failure analysis services, SEM, scanning electron microscopy, ellipsometer measurements, four point probe measurements.
 

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SILICON THERMAL OXIDATION
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SILICON THERMAL OXIDATION - DRY OXIDATION =100nm SILICON THERMAL OXIDATION - WET OXIDATION =1000nm
SILICON THERMAL OXIDATION - DRY OXIDATION =200nm SILICON THERMAL OXIDATION - WET OXIDATION =2000nm
SILICON THERMAL OXIDATION - DRY OXIDATION =300nm SILICON THERMAL OXIDATION - WET OXIDATION =3000nm
SILICON THERMAL OXIDATION - DRY OXIDATION =400nm SILICON THERMAL OXIDATION - WET OXIDATION =4000nm
SILICON THERMAL OXIDATION - DRY OXIDATION - CUSTOM PROCESS SILICON THERMAL OXIDATION - WET OXIDATION - CUSTOM PROCESS

Silicon thermal oxidation standard processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Silicon thermal oxidation processes are available only for prime wafers, delivered in sealed containers [original manufacturer seal must be present] or wafers supplied by HTE Labs. Standard process includes RCA Clean as well as HF Dip.


Home>Silicon Thermal Oxidation> Last updated: August 17, 2009

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