Bipolar wafer foundry - 45V analog linear bipolar process, wafer foundry services - advanced bipolar analog and digital semiconductors - Hte Labs 45V analog linear bipolar process wafer foundry services, Bipolar and CMOS wafer Foundry, Research and Development Laboratories for semiconductor optoelectonics, sensors, microwave, thin film active and passive components advanced linear bipolar,analog linear bipolar,superbeta,superbeta transistors,matched pair superbeta transistors,matched pair superbeta NPN,IC wafer foundry,Wafer foundry,wafer fabrication,Foundry services,Bipolar wafer foundry, bipolar process,BJT, BJT technology,High voltage process, Low power bipolar process,Research,Development,semiconductor,microelectronics,industry,wafer foundry,bipolar,High Voltage,Dielectic,Isolated,Thin film,active,passive,components,Flip Chip,Sensor Technologies,inertial,pressure,temperature,gas,smoke,detectors,Optoelectronic,Discrete,integrated circuits,diffused Light wave guides,Mach Zender light modulators,Epitaxy,Diffusion,Oxidation,Ion Implant,LPCVD,PECVD,Platinum silicidation,Photolithography,Plasma etching,Silicon Micromachining,KOH anisotropic etch,Sputter deposition,resistor,Lift Off Process,Back grind,Polish,Trimetal Backside deposition,Gold backside deposition,Gold Electro-plating,Gold Bump 45V 200MHz Analog Bipolar PROCESS HTE Labs STANDARD PROCESS OVERVIEW The standard 45V 200MHz analog bipolar process employs N type silicon epitaxial layer on P type silicon substrate. In the standard process up to 8 masks are used: - buried layer (sub collector), isolation, base, emitter, contact mask, thin film resistor mask, metal mask, pad mask. The devices available are vertical NPN transistors, vertical substrate PNP transistors, lateral PNP transistors, TaN2 - tantalum nitride thin film resistors and MNOS MOS (metal oxide semiconductor) capacitors. PROCESS OPTIONS Process enhancements are added to increase the integrated circuit designer's flexibility in designing with HTE Labs analog bipolar process. Optional devices available are as follows: P JFET (p channel junction field effect transistor), EPI N JFET (n channel silicon epitaxial junction field effect transistor), Schottky diodes,Varactor diodes, PIN diodes,Zenner diodes, laser trim able NiCr (nickel chrome resistors) , TaN2 (tantalum nitride resistors) or SiCr (silicon chrome resistors) sputtered thin film resistors. Sheet resistance for the integrated thin film resistors is offered in the widest range from 1? / square to 100k ? / square while the temperature coefficient of resistance is between 25 ppm/C to 500ppm/C. For metal interconnections HTE Labs process employs up to two layers of metallization, TiW/Au (standard metallization). The interlayer dielectric is 1m SiO2 while the passivation is Si3N4 or SiO2. Minimum contact size is 3m x 3m while the metal pitch is 10m. For flip chip, chip on board and chip scale packaging applications, Gold bumps or solder bumps are available process options. The 45V 200MHz custom analog bipolar process employs up to 12 masking layers for all features to be included. What sets HTE Labs apart are couple main process options and capabilities that are not typically acceptable or handled by large wafer foundries. * Custom developed processes Custom developed processesHTE Labs has the engineering resources and processing capabilities to develop custom processes to fit customer's specific applications. This capability is offered to customers on a contract base only. * High stability thin film resistors High stability thin film resistors with sheet resistance as high as 100K?/square. The matching of the as deposited thin film resistors is excellent with ought expensive laser trim. The absolute values of resistors are within 5% across the wafer and from wafer to wafer. For high speed RF IC process applications, thin film resistors are best suited due to their very low capacitance and low noise. * High reliability gold metal interconnections High reliability gold metal interconnections is a standard process feature specifically designed for hybrid circuits applications, chip on board applications and sensors that need to withstand corrosive environment where aluminum or copper metallization are not a suitable choices. * Process enhancements MEMS smart sensor integration KOH anisotropic etch, deep RIE etch, LPCVD polysilicon and front to back mask alignment are few process enhancements that are needed in developing and manufacturing of integrated smart pressure sensors, accelerometers and other as such. * Optoelectronics Optoelectronic integrated circuits Photo transistors, photodiodes and low capacitance high speed PIN diodes, when integrated with the bipolar process, allow increased flexibility to design and manufacturing of fiber optic amplifiers, optocouplers or optical switches. DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS NPN transistor hFE BVCEO BVCBO BVEBO Ic=100mA, Vce=2.5V Ice=1mA Icb=1mA Ieb=1mA 150 45 60 0.2 250 6.8 500 8 V V V PNP-L lateral transistor hFE BVCEO BVCBO BVEBO Ic=100mA, Vce=2.5V Ice=1mA Icb=1mA Ieb=1mA 30 30 50 30 40 50 V V V PNP-V vertical substrate pnp hFE BVCEO BVCBO BVEBO Ic=100mA, Vce=2.5V Ice=1mA Icb=1mA Ieb=1mA 50 50 50 50 100 200 V V V I2R Ion implanted resistors Rsq 150 ? MNOS C MOS capacitors C 0.3 pF/mil2 45V 500MHz Bipolar PROCESS OPTIONS DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS PJFET Vp BVgd0 Vds=-3.0V Igd=10mA 25 2.0 V V TFR Rsq low Rsq high TCR low TCR high 5 100k <25 500 ? ppm/C 45V BIPOLAR PROCESS TARGETS Starting Wafers 8-12 ?-cm P (111) 50025 microns Buried Layer Arsenic (N Type) 15-35/sq. 6-8 Epi Deposition 5-7 16-20 Isolation 5-9 20-22 Base 2.6 -3.3 180-220 Implanted Resistor 0.8-1.2 K?/sq, 1.6-2.4/sq Emitter 3.5-5.5 Capacitor Oxide 1300-1700 Angstroms Thin Film Chrome Silicon 100K?/sq., 1.3K? Metallization 11K1K 1% SiAl Passivation 7.50.5K Nitride 40V JUNCTION ISOLATED SPICE MODELS FOR MINIMUM GEOMETRY DEVICES PARAMETER NPN PNP Subs. WORST TYPICAL BEST BF 75 200 400 50 100 300 BR 2 1 IS 3.00E-16 3.00E-15 7.00E-15 NE 1.35 1.54 1.31 ISE 1.00E-15 2.00E-16 1.00E-14 5.00E-15 8.00E-15 VAF 80 15 20 35 ID 2mA 4mA 6mA 0.7mA 1mA 0.5mA RB 5000 1000 RBM 5 0 RC ISC 125pA CJE 0.5pF 0.2pF 0.7pF CJC 0.8pF 1pF CJS 1.5pF XTB 1.15 BIPOLAR, CHARACTERISTICS Resistance Temperature coefficients* TC1 TC2 200? 2200 4ppm/C2 CrSi -4500 22 -200 22? 4750 14 6?cm-1 7400 17 Pinch 4K? 1K? n/a 2K? R = R25[1+TC1(T-25)+TC2(T-25)2] Measured noise has been shown to follow Vn2 = 4KTR within 10%. DIODE CHARACTERISTICS, Breakdown Voltages Breakdown, @100nA Emitter-Base 7.8V Collector-Base 60V Sinker 17.3V Emitter-Iso 5.8V Collector-Emitter 55V in @ 100uA (nV/?Hz) 350 130 ANALOG - 4" WAFER FOUNDRY SERVICES At this time HTE Labs offers only fabrication the services. specializes prototypes and small runs of standard custom developed processes. Customers own tooling can be used most cases provided that design rules are compatible with current more information or request quote, please contact using instant quote form. R&D SEMICONDUCTOR DEVELOPMENT helping solve problems, capacity lower cost as well develop back-up existing in-house operations. Any company currently involved contemplating related technologies, encouraged consider expertise capabilities. discuss an application strictest confidentiality, navigate PAGE. provides specialties foundry,>thin film vacuum deposition services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry, R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process, 45V bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes. R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), MEMS technology, smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including SAW, Ti diffusion, light wave guides and Mach-Zender light modulators. Specialty wafer Fab processing: epi deposition, epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition, gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump, wafer probing, dicing services, wafer saw, package development, solid via packages, packaging and test services, failure analysis services, SEM, scanning electron microscopy, ellipsometer measurements, four point probe measurements.
 

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45V 200MHz Analog Bipolar PROCESS
HTE Labs

 

STANDARD PROCESS OVERVIEW
The standard 45V 200MHz analog bipolar process employs N type silicon epitaxial layer on P type silicon substrate. In the standard process up to 8 masks are used: - buried layer (sub collector), isolation, base, emitter, contact mask, thin film resistor mask, metal mask, pad mask. The devices available are vertical NPN transistors, vertical substrate PNP transistors, lateral PNP transistors, TaN2 - tantalum nitride thin film resistors and MNOS MOS (metal oxide semiconductor) capacitors.

PROCESS OPTIONS
Process enhancements are added to increase the integrated circuit designer's flexibility in designing with HTE Labs analog bipolar process. Optional devices available are as follows: P JFET (p channel junction field effect transistor), EPI N JFET (n channel silicon epitaxial junction field effect transistor), Schottky diodes,Varactor diodes, PIN diodes,Zenner diodes, laser trim able NiCr (nickel chrome resistors) , TaN2 (tantalum nitride resistors) or SiCr (silicon chrome resistors) sputtered thin film resistors. Sheet resistance for the integrated thin film resistors is offered in the widest range from 1Ω / square to 100k Ω / square while the temperature coefficient of resistance is between ±25 ppm/°C to ±500ppm/°C.
For metal interconnections HTE Labs process employs up to two layers of metallization, TiW/Au (standard metallization). The interlayer dielectric is 1µm SiO2 while the passivation is Si3N4 or SiO2. Minimum contact size is 3µm x 3µm while the metal pitch is 10µm. For flip chip, chip on board and chip scale packaging applications, Gold bumps or solder bumps are available process options. The 45V 200MHz custom analog bipolar process employs up to 12 masking layers for all features to be included. What sets HTE Labs apart are couple main process options and capabilities that are not typically acceptable or handled by large wafer foundries.
  • Custom developed processes
Custom developed processesHTE Labs has the engineering resources and processing capabilities to develop custom processes to fit customer's specific applications. This capability is offered to customers on a contract base only.
  • High stability thin film resistors
High stability thin film resistors with sheet resistance as high as 100KΩ/square. The matching of the as deposited thin film resistors is excellent with ought expensive laser trim. The absolute values of resistors are within ± 5% across the wafer and from wafer to wafer. For high speed RF IC process applications, thin film resistors are best suited due to their very low capacitance and low noise.
  • High reliability gold metal interconnections
High reliability gold metal interconnections is a standard process feature specifically designed for hybrid circuits applications, chip on board applications and sensors that need to withstand corrosive environment where aluminum or copper metallization are not a suitable choices.
  • Process enhancements
MEMS smart sensor integration KOH anisotropic etch, deep RIE etch, LPCVD polysilicon and front to back mask alignment are few process enhancements that are needed in developing and manufacturing of integrated smart pressure sensors, accelerometers and other as such.
  • Optoelectronics
Optoelectronic integrated circuits Photo transistors, photodiodes and low capacitance high speed PIN diodes, when integrated with the bipolar process, allow increased flexibility to design and manufacturing of fiber optic amplifiers, optocouplers or optical switches.

DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS
NPN transistor hFE Ic=100mA, Vce=2.5V 150 250 500  
BVCEO Ice=1mA 45     V
BVCBO Icb=1mA 60     V
BVEBO Ieb=1mA 6.2 6.8 8 V
PNP-L lateral transistor hFE Ic=100mA, Vce=2.5V 30 40 50  
BVCEO Ice=1mA 30     V
BVCBO Icb=1mA 50     V
BVEBO Ieb=1mA 30     V
PNP-V vertical substrate pnp hFE Ic=100mA, Vce=2.5V 50 100 200  
BVCEO Ice=1mA 50     V
BVCBO Icb=1mA 50     V
BVEBO Ieb=1mA 50     V
I2R Ion implanted resistors Rsq     150   Ω
MNOS C MOS capacitors C     0.3   pF/mil2

45V 500MHz Bipolar PROCESS OPTIONS
DEVICE PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNITS
PJFET Vp Vds=-3.0V 25 2.0   V
BVgd0 Igd=10mA 25     V
TFR Rsq low     5   Ω
Rsq high     100k   Ω
TCR low     <±25   ppm/°C
TCR high     ±500   ppm/°C

45V BIPOLAR PROCESS TARGETS
Starting Wafers 8-12 Ω-cm P (111) 500±25 microns
Buried Layer Arsenic (N Type) 15-35 Ω/sq. 6-8 microns
Epi Deposition 5-7 Ω-cm 16-20 microns
Isolation 5-9 Ω/sq. 20-22 microns
Base 2.6 -3.3 microns 180-220 Ω/sq.
Implanted Resistor 0.8-1.2 KΩ/sq, 1.6-2.4 KΩ/sq
Emitter 3.5-5.5 Ω/sq
Capacitor Oxide 1300-1700 Angstroms
Thin Film Resistor Chrome Silicon 100KΩ/sq., 1.3KΩ/sq.
Metallization 11K±1K Angstroms 1% SiAl
Passivation 7.5±0.5K Angstroms Silicon Nitride

40V JUNCTION ISOLATED BIPOLAR SPICE MODELS FOR MINIMUM GEOMETRY DEVICES
PARAMETER NPN PNP Subs. PNP
WORST TYPICAL BEST WORST TYPICAL BEST WORST TYPICAL BEST
BF 75 200 400 50 75 200 50 100 300
BR   2     1     1  
IS   3.00E-16     3.00E-15     7.00E-15  
NE   1.35     1.54     1.31  
ISE 1.00E-15 3.00E-16 2.00E-16 1.00E-14 5.00E-15 3.00E-15 1.00E-14 8.00E-15 5.00E-15
VAF 50 80 100 15 20 35 20 35 50
ID 2mA 4mA 6mA 0.7mA 1mA 2mA 0.5mA 1mA 2mA
RB   100     5000     1000  
RBM         5 0     50  
RC 400 200 100 400 200 100 400 200 100
ISC   125pA              
CJE   0.5pF     0.2pF     0.7pF  
CJC   0.8pF     1pF     0.7pF  
CJS   1.5pF              
XTB   2     1.15     2  

40V BIPOLAR, RESISTOR CHARACTERISTICS
Resistor Typical Resistance Temperature coefficients*
TC1 TC2
Base 200Ω/sq 2200 ppm/°C 4ppm/°C2
CrSi 100KΩ/sq -4500 22
CrSi 1.3KΩ/sq -200 0
Buried Layer 22Ω/sq 4750 14
Epi Layer 6Ωcm-1 7400 17
Epi Pinch 4KΩ/sq 7400 17
Implanted 1KΩ/sq n/a n/a
Implanted 2KΩ/sq n/a n/a
R = R25[1+TC1(T-25)+TC2(T-25)2]
Measured CrSi resistor noise has been shown to follow Vn2 = 4KTR within 10%.

40V BIPOLAR, DIODE CHARACTERISTICS, Breakdown Voltages
Diode Typical Breakdown, @100nA
Emitter-Base 7.8V
Collector-Base 60V
Sinker 17.3V
Emitter-Iso 5.8V
Collector-Emitter 55V
  
Noise in Breakdown
Diode Typical Noise @ 100uA (nV/√Hz)
Sinker 350
Emitter-Iso 130

ANALOG BIPOLAR PROCESS - 4" WAFER FOUNDRY SERVICES
At this time HTE Labs offers only 4" wafer fabrication for the analog bipolar wafer foundry services. HTE Labs wafer foundry specializes in prototypes and small runs of standard and custom developed analog bipolar processes. Customers own tooling can be used in most of the cases provided that design rules are compatible with current processes. For more information or a request for quote, please contact HTE Labs using the instant quote form.

WAFER FOUNDRY - R&D SEMICONDUCTOR PROCESS DEVELOPMENT
HTE LABS is helping customers to solve R&D problems, capacity problems, lower cost as well as develop a back-up process for existing in-house operations. Any company currently involved or contemplating R&D related to semiconductor devices or thin film technologies, is encouraged to consider using HTE LABS expertise and capabilities. To contact HTE LABS and discuss an application in the strictest confidentiality, navigate to CONTACT PAGE.

INSTANT QUOTE
FREQUENCY [GHz] PROCESS CODE QTY EMAIL  
 
ORDERING: Registered customers can order online from within assigned BUSINESS PORTAL. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by HTE LABS sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for Standard processes is 6-8 weeks ARO. For Custom processes lead time may vary.
SHIPPING & PACKING: For certain processes, customer should ship only prime wafers, delivered in sealed containers [original manufacturer seal must be present]. All wafers shipped to HTE LABS by customers, should be packed in suitable wafer carriers or wafer containers, wrapped in reusable minim 2 layers of air bubble packing material [pink anti-static bubble cushioning wrap], or air pillows and heavy wall cardboard boxes. Foam packing peanuts are not acceptable due to the nuisance caused by particles and electrostatic charge generated during shipping.
SAMPLES: Due to the nature of this product line, free samples are not available, unless they are against an existing firm order, pending qualification of a process.
HTE LABS guarantees continuous supply and availability of any of it's standard or custom developed processes and technologies provided minimum order quantities are met.
HTE LABS has made every effort to have this information as accurate as possible. However, no responsibility is assumed by HTE LABS for its use, nor for any infringements of rights of third parties, which may result from its use. HTE LABS reserves the right to revise the content or modify its product line without prior notice. HTE LABS processes and technologies are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without HTE LABS specific written consent.

HOME>BIPOLAR PROCESS WAFER FOUNDRY> Last updated: July 06, 2009

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