PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION, PECVD SILICON DIOXIDE SIO2 DEPOSITION, PECVD SILICON NITRIDE SIN DEPOSITION, PECVD SILICON CARBIDE SIC DEPOSITION, PECVD SILICON OXINITRIDE SION DEPOSITION, PECVD AMORPHOUS SILICON A:SI DEPOSITION, PECVD SILICON CARBONITRIDE SICN DEPOSITION, PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 1000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 1000NM PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 2000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 2000NM PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 3000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 3000NM PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 4000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 4000NM PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 5000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 5000NM PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 1000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 1000NM PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 2000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 2000NM PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 3000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 3000NM PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 4000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 4000NM PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 5000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 5000NM PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 1000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 1000NM PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 2000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 2000NM PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 3000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 3000NM PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 4000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 4000NM PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 5000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 5000NM Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide, silicon nitride, silicon oxynitride un-doped silica glass (USG) , amorphous silicon a:Si, silicon carbide SIC and silicon carbonitride SICN or silicon nitrocarbide SICN thin films. PECVD thin films are especially used to form antireflection coatings in optoelectronic devices, hard masks for chemical etching or plasma etching of silicon, inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition, PECVD Oxide, PECVD Nitride, PECVD Amorphous silicon, PECVD silicon Carbide and PECVD silicon Carbonitride or Nitrocarbide standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of silicon dioxide, silicon nitride, amorphous silicon, silicon carbide and silicon nitrocarbide processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of silicon dioxide, silicon nitride and amorphous silicon processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a 280° C process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process.
 
 
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
PECVD SILICON DIOXIDE SIO2 DEPOSITION
PECVD SILICON NITRIDE SIN DEPOSITION
PECVD SILICON CARBIDE SIC DEPOSITION
PECVD SILICON OXINITRIDE SION DEPOSITION
PECVD AMORPHOUS SILICON A:SI DEPOSITION
PECVD SILICON CARBONITRIDE SICN DEPOSITION
 
 

PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 1000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 1000NM
PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 2000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 2000NM
PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 3000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 3000NM
PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 4000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 4000NM
PLASMA ENHANCED CVD - PECVD SILICON DIOXIDE SIO2 5000NM PLASMA ENHANCED CVD - PECVD SILICON OXINITRIDE SION 5000NM
 
PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 1000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 1000NM
PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 2000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 2000NM
PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 3000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 3000NM
PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 4000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 4000NM
PLASMA ENHANCED CVD - PECVD SILICON NITRIDE SIN 5000NM PLASMA ENHANCED CVD - PECVD AMORPHOUS SILICON A:SI 5000NM
 
PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 1000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 1000NM
PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 2000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 2000NM
PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 3000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 3000NM
PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 4000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 4000NM
PLASMA ENHANCED CVD - PECVD SILICON CARBIDE SIC 5000NM PLASMA ENHANCED CVD - PECVD SILICON CARBONITRIDE SICN 5000NM
 

Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide, silicon nitride, silicon oxynitride un-doped silica glass (USG) , amorphous silicon a:Si, silicon carbide SIC and silicon carbonitride SICN or silicon nitrocarbide SICN thin films. PECVD thin films are especially used to form antireflection coatings in optoelectronic devices, hard masks for chemical etching or plasma etching of silicon, inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition, PECVD Oxide, PECVD Nitride, PECVD Amorphous silicon, PECVD silicon Carbide and PECVD silicon Carbonitride or Nitrocarbide standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm, 75mm, 100mm, 125mm, 150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of silicon dioxide, silicon nitride, amorphous silicon, silicon carbide and silicon nitrocarbide processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of silicon dioxide, silicon nitride and amorphous silicon processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a 280° C process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process.

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