PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION, PECVD OXIDE DEPOSITION, PECVD OXYNITRIDE DEPOSITION, PECVD NITRIDE DEPOSITION, PECVD AMORPHOUS a:Si SILICON DEPOSITION Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide, silicon nitride, silicon oxynitride, un-dopped silica glass (USG) and amorphous a:Si thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXIDE DEPOSITION SIO2 = 1000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXIDE DEPOSITION SIO2 = 2000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXIDE DEPOSITION SIO2 = 3000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXIDE DEPOSITION SIO2 = 4000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXIDE DEPOSITION SIO2 = 5000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXIDE DEPOSITION SIO2 CUSTOM PROCESS PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXYNITRIDE DEPOSITION SION = 1000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXYNITRIDE DEPOSITION SION = 2000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXYNITRIDE DEPOSITION SION = 3000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXYNITRIDE DEPOSITION SION = 4000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXYNITRIDE DEPOSITION SION = 5000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD OXYNITRIDE DEPOSITION SION CUSTOM PROCESS PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD NITRIDE DEPOSITION SIN = 1000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD NITRIDE DEPOSITION SIN = 2000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD NITRIDE DEPOSITION SIN = 3000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD NITRIDE DEPOSITION SIN = 4000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD NITRIDE DEPOSITION SIN = 5000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD NITRIDE DEPOSITION SIN CUSTOM PROCESS PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD A:SI DEPOSITION A:SI = 1000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD A:SI DEPOSITION A:SI = 2000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD A:SI DEPOSITION A:SI = 3000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD A:SI DEPOSITION A:SI = 4000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD A:SI DEPOSITION A:SI = 5000NM PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - PECVD A:SI DEPOSITION A:SI CUSTOM PROCESS HTE Labs provides process specialties wafer foundry, thin film vacuum deposition services, applied thin film processing for analog and mixed signal bipolar manufacturing processes, Analog CMOS wafer foundry, R&D support, research and development support for microelectronics and process specialties wafer Fab processing to customers from semiconductors and microelectronics industry. Bipolar wafer foundry includes the following processes: 20V bipolar process,45V bipolar process,75V bipolar process,25V super-beta bipolar process and high voltage dielectric isolated bipolar processes. R&D support is provided in the following fields of microelectronics: test and measurement, medical instrumentation, industrial process control and communications, thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), MEMS technology, smart sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications including SAW, Ti diffusion, light wave guides and Mach-Zender light modulators. Specialty wafer Fab processing: epi deposition, epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD nitride, PECVD nitride Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition, gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by tri-metal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump, wafer probing, dicing services, wafer saw, package development, solid via packages, packaging and test services, failure analysis services, SEM, scanning electron microscopy, ellipsometer measurements, four point probe measurements.

	PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PECVD OXIDE DEPOSITION PECVD OXYNITRIDE DEPOSITION PECVD NITRIDE DEPOSITION PECVD AMORPHOUS a: SILICON DEPOSITION
HTE Labs

PLASMA ENHANCED CVD - PECVD OXIDE SIO2 = 1000NM PLASMA ENHANCED CVD - PECVD OXYNITRIDE SION = 1000NM PLASMA ENHANCED CVD - PECVD OXIDE SIO2 = 2000NM PLASMA ENHANCED CVD - PECVD OXYNITRIDE SION = 2000NM PLASMA ENHANCED CVD - PECVD OXIDE SIO2 = 3000NM PLASMA ENHANCED CVD - PECVD OXYNITRIDE SION = 3000NM PLASMA ENHANCED CVD - PECVD OXIDE SIO2 = 4000NM PLASMA ENHANCED CVD - PECVD OXYNITRIDE SION = 4000NM PLASMA ENHANCED CVD - PECVD OXIDE SIO2 = 5000NM PLASMA ENHANCED CVD - PECVD OXYNITRIDE SION = 5000NM PLASMA ENHANCED CVD - PECVD OXIDE SIO2 CUSTOM PROCESS PLASMA ENHANCED CVD - PECVD OXYNITRIDE SION CUSTOM PROCESS PLASMA ENHANCED CVD - PECVD NITRIDE SIN = 1000NM PLASMA ENHANCED CVD - PECVD A:SI A:SI = 1000NM PLASMA ENHANCED CVD - PECVD NITRIDE SIN = 2000NM PLASMA ENHANCED CVD - PECVD A:SI A:SI = 2000NM PLASMA ENHANCED CVD - PECVD NITRIDE SIN = 3000NM PLASMA ENHANCED CVD - PECVD A:SI A:SI = 3000NM PLASMA ENHANCED CVD - PECVD NITRIDE SIN = 4000NM PLASMA ENHANCED CVD - PECVD A:SI A:SI = 4000NM PLASMA ENHANCED CVD - PECVD NITRIDE SIN = 5000NM PLASMA ENHANCED CVD - PECVD A:SI A:SI = 5000NM PLASMA ENHANCED CVD - PECVD NITRIDE SIN CUSTOM PROCESS PLASMA ENHANCED CVD - PECVD A:SI A:SI CUSTOM PROCESS Plasma enhanced chemical vapor deposition (PECVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing to obtain silicon oxide, silicon nitride, silicon oxynitride un-dopped silica glass (USG) and amorphous a:Si thin films. PECVD thin films are especially useed to form inter-metal dielectric (IMD) stacks, even into 90nm semiconductor technology node. PECVD films are used in multilayers interconnections, Dual Damascene, ILD [inter-layer dielectrics planarization (ILD) ], STI [formation of shallow trench isolation (STI) structures] processes. Plasma Enhanced Chemical Vapor Deposition, PECVD Oxide, PECVD Nitride and PECVD Amorphous silicon standard and custom processes are available for 1in, 2in, 3in, 4inch, 5in, 6in, 8in and 12 in wafers [25mm, 50mm,75mm,100mm, 125mm,150mm, 200mm and 300mm wafers]. Plasma enhanced low pressure and low temperature chemical vapor deposition of silicon dioxide, silicon nitride and amorphous silicon processes are available for device grade silicon wafers, fused silica wafers, silicon carbide, sapphire and SOI wafers, delivered in sealed containers, precleaned by customers. Plasma enhanced low pressure and low temperature chemical vapor depositions of silicon dioxide, silicon nitride and amorphous silicon processes are ALSO available for patterned wafers with exposed metals including aluminum [Al], copper [Cu], tungsten [W], tantalum nitride [TaN], gold [Au], etc. This is a 280 C process and wafers should be free of any photoresist or organic contamination. HTE Labs acceptance of customer supplied wafers is conditional, pending customer full disclosure of substrate composition, layer by layer, last process step or last cleaning process.

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Last updated: May 29, 2007

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